PART |
Description |
Maker |
CY7C1372CV25-167AI CY7C1372CV25-167BGI CY7C1372CV2 |
512K x 36/1M x 18 Pipelined SRAM with NoBLArchitecture 1M X 18 ZBT SRAM, 3 ns, PQFP100 512K x 36/1M x 18 Pipelined SRAM with NoBLArchitecture 1M X 18 ZBT SRAM, 3 ns, PBGA165 512K x 36/1M x 18 Pipelined SRAM with NoBLArchitecture 1M X 18 ZBT SRAM, 3 ns, PBGA119 512K x 36/1M x 18 Pipelined SRAM with NoBLArchitecture 1M X 18 ZBT SRAM, 2.8 ns, PBGA119 512K x 36/1M x 18 Pipelined SRAM with NoBLArchitecture 1M X 18 ZBT SRAM, 2.8 ns, PBGA165 512K x 36/1M x 18 Pipelined SRAM with NoBLArchitecture 512K X 36 ZBT SRAM, 3 ns, PBGA165 512K x 36/1M x 18 Pipelined SRAM with NoBLArchitecture 512K X 36 ZBT SRAM, 3 ns, PQFP100 512K x 36/1M x 18 Pipelined SRAM with NoBLArchitecture 512K X 36 ZBT SRAM, 3.4 ns, PQFP100 512K x 36/1M x 18 Pipelined SRAM with NoBLArchitecture 512K X 36 ZBT SRAM, 3.4 ns, PBGA165 512K x 36/1M x 18 Pipelined SRAM with NoBLArchitecture 12k × 36/1M × 18流水线的SRAM架构的总线延迟 CAP,Ceramic,10000pF,500VDC,10-% Tol,10% Tol,X7R-TC Code,-15,15%-TC,30ppm-TC RoHS Compliant: Yes 512K x 36/1M x 18 Pipelined SRAM with NoBL Architecture
|
Cypress Semiconductor, Corp. Cypress Semiconductor Corp.
|
IS61NLF102436A IS61NLF102436A-6.5B3 IS61NLF102436A |
STATE BUS SRAM 1M X 36 ZBT SRAM, 6.5 ns, PBGA165 13 X 15 MM, PLASTIC, BGA-165 1M X 36 ZBT SRAM, 6.5 ns, PQFP100 TQFP-100 2M X 18 ZBT SRAM, 6.5 ns, PBGA165 13 X 15 MM, PLASTIC, BGA-165 2M X 18 ZBT SRAM, 6.5 ns, PQFP100 TQFP-100
|
Integrated Silicon Solution, Inc.
|
IDT71V547S90PFI |
128K X 36, 3.3V Synchronous SRAM with ZBT Feature, Burst Counter and Flow-Through Outputs 128K X 36 ZBT SRAM, 9 ns, PQFP100
|
Integrated Device Technology, Inc.
|
K7N803601B K7N801801B K7N803601B-PI160 K7N801801B- |
256Kx36 & 512Kx18 Pipelined NtRAM 256K X 36 ZBT SRAM, 3.5 ns, PQFP100 512K X 18 ZBT SRAM, 3.5 ns, PQFP100
|
Samsung semiconductor
|
MT55L128L32P1 MT55L256V18P1 MT55L256L18P1 MT55L128 |
3.3V I/O28K x 32,Flow-Through ZBT SRAM(3.3V输入/输出,4Mb流通式同步静态存储器) 2.5V I/O56K x 18,Flow-Through ZBT SRAM(2.5V输入/输出,4Mb流通式同步静态存储器) 3.3V I/O56K x 18,Flow-Through ZBT SRAM(3.3V输入/输出,4Mb流通式同步静态存储器) 3.3V的I / O56 × 18,流量通过ZBT SRAM的电压(3.3V输入/输出Mb的流通式同步静态存储器 3.3V I/O28K x 36,Flow-Through ZBT SRAM(3.3V或输输出,4Mb流通式同步静态存储器) 3.3V的I / O28K的36,流量通过ZBT SRAM的电压(3.3V或输输出Mb的流通式同步静态存储器 2.5V I/O28K x 32,Flow-Through ZBT SRAM(2.5V输入/输出,4Mb流通式同步静态存储器) 2.5VI / O28K的32,流量通过ZBT SRAM的电压(2.5V输入/输出Mb的流通式同步静态存储器
|
Micron Technology, Inc.
|
CY7C1464AV33-167BGXI CY7C1464AV33-200BGXC CY7C1462 |
36-Mbit (1M x 36/2M x 18/512K x 72) Pipelined SRAM with NoBLArchitecture 512K X 72 ZBT SRAM, 3.4 ns, PBGA209 36-Mbit (1M x 36/2M x 18/512K x 72) Pipelined SRAM with NoBLArchitecture 512K X 72 ZBT SRAM, 3.2 ns, PBGA209 36-Mbit (1M x 36/2M x 18/512K x 72) Pipelined SRAM with NoBLArchitecture 2M X 18 ZBT SRAM, 2.6 ns, PBGA165 2M X 18 ZBT SRAM, 3.2 ns, PQFP100
|
Cypress Semiconductor, Corp. CYPRESS SEMICONDUCTOR CORP
|
IDT7052S25PQF |
SMD-IC,MEM,SRAM,2KX8 25NS,4PORT,PAR,PQFP 2K X 8 FOUR-PORT SRAM, 25 ns, PQFP132
|
Integrated Device Technology, Inc.
|
AS7C332MNTF18A.V1.2 AS7C332MNTF18A-85TQIN AS7C332M |
3.3V 2M x 18 Flowthrough SRAM with NTD 2M X 18 ZBT SRAM, 10 ns, PQFP100 3.3V 2M x 18 Flowthrough SRAM with NTD 2M X 18 ZBT SRAM, 7.5 ns, PQFP100 From old datasheet system
|
Alliance Semiconductor, Corp. ALSC[Alliance Semiconductor Corporation]
|
GS881Z32BD-200IV GS881Z36BD-200IV GS881Z18BD-200IV |
9Mb Pipelined and Flow Through Synchronous NBT SRAM 256K X 32 ZBT SRAM, 6.5 ns, PBGA165 9Mb Pipelined and Flow Through Synchronous NBT SRAM 256K X 36 ZBT SRAM, 6.5 ns, PBGA165 9Mb Pipelined and Flow Through Synchronous NBT SRAM 512K X 18 ZBT SRAM, 6.5 ns, PBGA165 9Mb Pipelined and Flow Through Synchronous NBT SRAM 256K X 32 ZBT SRAM, 5.5 ns, PQFP100
|
GSI Technology, Inc.
|
CY7C1371C-117BGI CY7C1371C-117BZC CY7C1371C-117BGC |
18-Mbit (512K x 36/1M x 18) Flow-Through SRAM with NoBL Architecture 1M X 18 ZBT SRAM, 7.5 ns, PBGA119 18-Mbit (512K x 36/1M x 18) Flow-Through SRAM with NoBL Architecture 1M X 18 ZBT SRAM, 7.5 ns, PQFP100
|
Cypress Semiconductor Corp. Cypress Semiconductor, Corp.
|
|